Investigations of photoresponse signals of LT-GaAs photodetector

In this paper, we demonstrate our electro-optic sampling system constructed for characterization of high-speed photodetectors based on low-temperature-grown GaAs (LT-GaAs). Changes in the shape of electrical signals for different optical powers, voltage biases and positions of a probe beam have been shown. The obtained photoresponse of the investigated photodetector exhibits 0.9 ps (full width at half maximum).