全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

Optical Properties of RF Sputtered Samarium Oxide Thin Films

DOI: 10.4236/oalib.1102065, PP. 1-12

Subject Areas: Experimental Physics

Keywords: Samarium Oxide, RF Sputtering, Optical Gap, Refractive Index, Dispersion Energy

Full-Text   Cite this paper   Add to My Lib

Abstract

This paper reports the optical properties of prepared samarium oxide Sm2O3 thin films nanoparticles using RF sputtering technique. X-ray diffraction is used to examine and characterize the prepared films. Optical measurements are carried out by employing U-V-Visible spectroscopy to study optoelectronic properties of Sm2O3 thin films. These films are highly transparent in the visible range. The average value of the optical gap belonging to the thin films deposited under different pressure of the gas is 4.33 eV. The refractive index (n) behaves as normal dispersion and decreases with increasing the pressure of the gas. The dispersion energy and single oscillator energy increase with increasing the pressure of the gas whereas the optical conductivity decreases with increasing the power on Sb target.

Cite this paper

El-Raheem, M. M. A. , Bogami, M. H. E. , Al-Baradi, A. M. , Amin, S. A. , El-Naggar, A. M. and Albassam, A. A. (2015). Optical Properties of RF Sputtered Samarium Oxide Thin Films. Open Access Library Journal, 2, e2065. doi: http://dx.doi.org/10.4236/oalib.1102065.

References

[1]  Wilk, G.D., Wallace, R.M. and Anthony, J.M. (2001) High-κ Gate Dielectrics: Current Status and Materials Properties Considerations. Journal of Applied Physics, 89, 5243-5275.
http://dx.doi.org/10.1063/1.1361065
[2]  Wong, H. and Iwai, H. (2006) On the Scaling Issues and High-κ Replacement of Ultrathin Gate Dielectrics for Nanoscale MOS Transistors. Microelectronic Engineering, 83, 1867-904.
http://dx.doi.org/10.1016/j.mee.2006.01.271
[3]  Wong, Y.H. and Cheong, K.Y. (2010) ZrO2 Thin Films on Si Substrate. Journal of Materials Science: Materials in Electronics, 21, 980-993.
http://dx.doi.org/10.1007/s10854-010-0144-5
[4]  Jagadeesh Chandra, S.V., Choi, C.-J., Uthanna, S. and Mohan Rao, G. (2010) Structural and Electrical Properties of Radio Frequency Magnetron Sputtered Tantalum Oxide Films: Influence of Post-Deposition Annealing. Materials Sci- ence in Semiconductor Processing, 13, 245-251.
http://dx.doi.org/10.1016/j.mssp.2010.08.002
[5]  Buchanan, D.A. and Lo, S.H. (1997) Reliability and Integration of Ultra-Thin Gate Dielectrics for Advanced CMOS. Microelectronic Engineering, 36, 13.
http://dx.doi.org/10.1016/S0167-9317(97)00007-5
[6]  Heiser, G. and Schenk, A. (1997) Modeling and Simulation of Tunneling through Ultra-Thin Gate Dielectrics. Journal of Applied Physics, 81, 7900.
http://dx.doi.org/10.1063/1.365364
[7]  Alers, G.B., Werder, D.J., Chabal, Y., Lu, H.C., Gusev, E.P., Garfunkel, E., Gustafsson, T. and Urdahl, R.S. (1998) Intermixing at the Tantalum Oxide/Silicon Interface in Gate Dielectric Structures. Applied Physics Letters, 73, 1517.
http://dx.doi.org/10.1063/1.122191
[8]  Leskel, M. and Ritala, M. (2003) Rare-Earth Oxide Thin Films as Gate Oxides in MOSFET Transistors. Journal of Solid State Chemistry, 171, 170-174.
http://dx.doi.org/10.1016/S0022-4596(02)00204-9
[9]  Kao, C.-H., Chen, H., Chiu, J.S., Chen, K.S. and Pan, Y.T. (2010) Physical and Electrical Characteristics of the High-k Ta2O5 (Tantalum Pentoxide) Dielectric Deposited on the Polycrystalline Silicon. Applied Physics Letters, 96, 1112901- 3.
http://dx.doi.org/10.1063/1.3334725
[10]  Chakraborty, S., Bera, M.K. Bhattacharya, S. and Maiti, C.K. (2005) Current Conduction Mechanism in TiO2 Gate Dielectrics. Microelectronic Engineering, 81, 188-193.
http://dx.doi.org/10.1016/j.mee.2005.03.005
[11]  Chen, C.-W., Chien, C.-H., Perng, T.-H., Yang, M.-J., Liang, J.-S., Lehnen, P., Tsui, B.-Y. and Chang, C.-Y. (2005) Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments. Japanese Journal of Applied Physics, 44, 87-93.
http://dx.doi.org/10.1143/JJAP.44.87
[12]  Mbarek, I.B., Chaabouni, F., Selmi, M., Abaab, M. and Rezig, B. (2010) Effect of the Substrate Temperature on the Properties of the RF Sputtered TiO2 Thin Films. Physica Status Solidi (c), 7, 2311-2315.
http://dx.doi.org/10.1002/pssc.200983739
[13]  Srivastava, A., Nahar, R. and Sarkar, C. (2010) Study of the Effect of Thermal Annealing on High k Hafnium Oxide Thin Film Structure and Electrical Properties of MOS and MIM Devices. Journal of Materials Science: Materials in Electronics, 22, 882-889.
http://dx.doi.org/10.1007/s10854-010-0230-8
[14]  Khaleeq-ur-Rahman, M., Bhatti, K.A., Rafique, M.S., Anjum, S., Latif, A. and Anjum, M. (2010) Morphological and Structural Analysis of Nano-Structured Gold Thin Film on Silicon by Pulsed Laser Deposition Technique. Vacuum, 85, 353-357.
http://dx.doi.org/10.1016/j.vacuum.2010.05.002
[15]  Sang, J., Ha, J.S., Park, N.K., Kang, D.K. and Kim, B.-H. (2006) 5 nm Thick Lanthanum Oxide Thin Films Grown on Si(100) by Atomic Layer Deposition: The Effect of Post-Annealing on the Electrical Properties. Thin Solid Films, 513, 253-257.
http://dx.doi.org/10.1016/j.tsf.2006.01.008
[16]  Lo Nigro, R., Toro, R.G., Malandrino, G., Fragal, I.L., Raineri, V. and Fiorenza, P. (2006) Praseodymium Based High-k Dielectrics Grown on Si and SiC Substrates. Materials Science in Semiconductor Processing, 9, 1073-1078.
http://dx.doi.org/10.1016/j.mssp.2006.10.026
[17]  Dakhel, A.A. (2005) Characterisation of Oxidised Gadolinium Film Deposited on Si(100) Substrate. Journal of Alloys and Compounds, 388, 177-185.
http://dx.doi.org/10.1016/j.jallcom.2004.07.019
[18]  Dakhel, A.A. (2004) Electrical Conduction Processes in Neodymium Oxide Thin Films Prepared on Si(100) Substrates. Journal of Alloys and Compounds, 376, 38-42.
http://dx.doi.org/10.1016/j.jallcom.2004.01.009
[19]  Pan, T.-M. and Huang, W.-S. (2009) Physical and Electrical Characteristics of a High-k Yb2O3 Gate Dielectric. Applied Surface Science, 255, 4979-4982.
http://dx.doi.org/10.1016/j.apsusc.2008.12.048
[20]  Leskela, M., Kukli, K. and Ritala, M. (2006) Rare-Earth Oxide Thin Films for Gate Dielectrics in Microelectronics. Journal of Alloys and Compounds, 418, 27-34.
http://dx.doi.org/10.1016/j.jallcom.2005.10.061
[21]  Chiu, F.-C. (2010) Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film. IEEE Transactions on Electron Devices, 57, 2719-2725.
[22]  Kim, W.-H., Maeng, W.J., Moon, K.-J., Myoung, J.-M. and Kim, H. (2010) Growth Characteristics and Electrical Properties of La2O3 Gate Oxides Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition. Thin Solid Films, 519, 362-366.
http://dx.doi.org/10.1016/j.tsf.2010.07.108
[23]  Pan, T.-M. and Huang, C.-C. (2010) Effects of Oxygen Content and Postdeposition Annealing on the Physical and Electrical Properties of Thin Sm2O3 Gate Dielectrics. Applied Surface Science, 256, 7186-7193.
http://dx.doi.org/10.1016/j.apsusc.2010.05.048
[24]  Pan, T.-M. and Yen, L.-C. (2010) Influence of Postdeposition Annealing on Structural Properties and Electrical Characteristics of Thin Tm2O3 and Tm2Ti2O7 Dielectrics. Applied Surface Science, 256, 2786-2791.
http://dx.doi.org/10.1016/j.apsusc.2009.11.029
[25]  Yang, C., Fan, H., Qiu, S., Xi, Y. and Fu, Y. (2009) Microstructure and Dielectric Properties of La2O3 Films Prepared by Ion Beam Assistant Electron-Beam Evaporation. Journal of Non-Crystalline Solids, 355, 33-37.
http://dx.doi.org/10.1016/j.jnoncrysol.2008.09.029
[26]  Dakhel, A.A. (2004) Dielectric and Optical Properties of Samarium Oxide Thin Films. Journal of Alloys and Compounds, 365, 233-239.
http://dx.doi.org/10.1016/S0925-8388(03)00615-7
[27]  Paivasaari, J., Putkonen, M. and Niinist, L.A. (2005) A Comparative Study on Lanthanide Oxide Thin Films Grown by Atomic Layer Deposition. Thin Solid Films, 472, 275-281.
http://dx.doi.org/10.1016/j.tsf.2004.06.160
[28]  Yang, D., Xue, L.I. and Devine, R.A.B. (2003) Charge Trapping in and Electrical Properties of Pulsed Laser Deposited Sm2O3 Films. Journal of Applied Physics, 93, 9389.
http://dx.doi.org/10.1063/1.1569660
[29]  Shalini, K. and Shivashankar, S. (2005) Oriented Growth of Thin Films of Samarium Oxide by MOCVD. Bulletin of Materials Science, 28, 49-54.
http://dx.doi.org/10.1007/BF02711172
[30]  Pan, T.-M., Huang, C.-C., You, S.-X. and Yeh, C.-C. (2008) Effect of Annealing on the Structural and Electrical Properties of High-k Sm2O3 Dielectrics. Electrochemical and Solid-State Letters, 11, G62-G65.
http://dx.doi.org/10.1149/1.2990226
[31]  Chin, W.C., Cheong, K.Y. and Hassan, Z. (2010) Sm2O3 Gate Dielectric on Si Substrate. Materials Science in Semiconductor Processing, 13, 303-314.
http://dx.doi.org/10.1016/j.mssp.2011.02.001
[32]  Kaya, S., Yilmaz, E., Karacali, H., Cetinkaya, A.O. and Aktag, A. (2015) Samarium Oxide Thin Films Deposited by Reactive Sputtering: Effects of Sputtering Power and Substrate Temperature on Microstructure, Morphology and Electrical Properties. Materials Science in Semiconductor Processing, 33, 42-48.
http://dx.doi.org/10.1016/j.mssp.2015.01.035
[33]  AmaliRoselin, A., Anandhan, N., Ravi, G., Mummoorthi, M. and Marimuthu, T. (2014) Growth and Characterization of Sm2O3 Thin Films by Spin Coating Technique. International Journal of ChemTech Research, 6, 5315-5320.
[34]  Kang, J.-G., Min, B.-K. and Sohn, Y. (2015) Synthesis and Characterization of Sm(OH)3 and Sm2O3 Nanoroll Sticks. Journal of Materials Science, 50, 1958-1964.
http://dx.doi.org/10.1007/s10853-014-8760-8
[35]  Tolansky, S., Ed. (1978) Multiple-Beam Interferometry Surface and Films. Oxford University Press, London, 76.
[36]  El-Nahass, M.M. (1992) Optical Properties of Tin Diselenide Films. Journal of Materials Science, 27, 6597-6604.
http://dx.doi.org/10.1007/BF01165942
[37]  Di Giulio, M., Micocci, G., Rella, R., Siciliano, P. and Tepore, A. (1993) Optical Absorption of Tellurium Suboxide Thin Films. Physica Status Solidi (a), 136, K101-K104.
http://dx.doi.org/10.1002/pssa.2211360236
[38]  El-Nahass, M.M., El-Deeb, A.F., Metwally, H.S. and Hassanien, A.M. (2010) Structural and Optical Properties of Iron (III) Chloride Tetraphenylporphyrin Thin Films. The European Physical Journal Applied Physics, 52, 10403.
http://dx.doi.org/10.1051/epjap/2010134
[39]  El-Nahass, M.M., El-Deeb, A.F., Metwally, H.S., El-Sayed, H.E.A. and Hassanien, A.M. (2010) Influence of X-Ray Irradiation on the Optical Properties of Iron (III) Chloride Tetraphenylporphyrin Thin Films. Solid State Sciences, 12, 552-557.
http://dx.doi.org/10.1016/j.solidstatesciences.2010.01.004
[40]  El-Nahhas, M.M., Farid, A.M., Attia, A.A. and Ali, H.A.M. (2006) Structural Properties and UV to NIR Absorption Spectra of Metal-Free Phthalocyanine (H2Pc) Thin Films. Fizika A, 15, 147-164.
[41]  El-Nahass, M.M., El-Gohary, Z. and Soliman, H.S. (2003) Structural and Optical Studies of Thermally Evaporated CoPc Thin Films. Optics & Laser Technology, 35, 523-531.
http://dx.doi.org/10.1016/S0030-3992(03)00068-9
[42]  Pal, U., Samanta, D., Ghori, S. and Chaudhuri, A.K. (1993) Optical Constants of Vacuum-Evaporated Polycrystalline Cadmium Selenide Thin Films. Journal of Applied Physics, 74, 6368.
http://dx.doi.org/10.1063/1.355161
[43]  Constantinescu, C., Ion, V., Galca, A.C. and Dinescu, M. (2012) Morphological, Optical and Electrical Properties of Samarium Oxide Thin Films. Thin Solid Films, 520, 6393-6397.
http://dx.doi.org/10.1016/j.tsf.2012.06.049
[44]  Kumar, B., Gong, H. and Akkipeddi, R. (2005) A Study of Conduction in the Transition Zone between Homologous and ZnO-Rich Regions in the In2O3-ZnO System. Journal of Applied Physics, 97, Article ID: 063706.
http://dx.doi.org/10.1063/1.1862311
[45]  Alhuthali, A., El-Nahass, M.M., Atta, A.A., El-Raheem, M.M.A., Elsabawy, K.M. and Hassanien, A.M. (2015) Study of Topological Morphology and Optical Properties of SnO2 Thin Films Deposited by RF Sputtering Technique. Journal of Luminescence, 158, 165-171.
http://dx.doi.org/10.1016/j.jlumin.2014.09.044
[46]  Mott, N.F. and Davis, E.A. (1979) Electronic Process in Non-Crystalline Materials. Clarendon Press, Oxford.
[47]  Arshak, K. and Korostynska, O. (2006) Response of Metal Oxide Thin Film Structures to Radiation. Materials Science and Engineering: B, 133, 1-3.
http://dx.doi.org/10.1016/j.mseb.2006.06.012
[48]  Rakhshani, A.E. (2000) Study of Urbach Tail, Bandgap Energy and Grain-Boundary Characteristics in CdS by Modulated Photocurrent Spectroscopy. Journal of Physics: Condensed Matter, 12, 4391-4400.
[49]  Urbach, F. (1953) The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids. Physical Review, 92, 1324.
http://dx.doi.org/10.1103/PhysRev.92.1324
[50]  Turku, B.I., Kapustianyk, V.B., Rudy, V.P., Lubochkova, G.A. and Simkiv, B.A. (2006) Investigation of the Intrinsic Absorption Edge in Nanostructured Polycrystalline Zinc Oxide Thin Films. Journal of Applied Spectroscopy, 73, 222- 226.
http://dx.doi.org/10.1007/s10812-006-0062-8
[51]  Wemple, S.H. (1973) Refractive-Index Behavior of Amorphous Semiconductors and Glasses. Physical Review B, 7, 3767.
http://dx.doi.org/10.1103/PhysRevB.7.3767
[52]  Konstantinov, I., Babeva, T. and Kitova, S. (1998) Analysis of Errors in Thin-Film Optical Parameters Derived from Spectrophotometric Measurements at Normal Light Incidence. Applied Optics, 37, 4260-4267.
http://dx.doi.org/10.1364/AO.37.004260
[53]  Caglar, Y., Ilican, S. and Caglar, M. (2007) Single-Oscillator Model and Determination of Optical Constants of Spray Pyrolyzed Amorphous SnO2 Thin Films. The European Physical Journal B, 58, 251-256.
http://dx.doi.org/10.1140/epjb/e2007-00227-y

Full-Text


comments powered by Disqus

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133

WeChat 1538708413