%0 Journal Article
%T Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure
%A Chul Huh
%A Bong K Kim
%A Byoung-Jun Park
%A Eun-Hye Jang and Sang-Hyeob Kim
%J Nanoscale Research Letters
%D 2013
%I 
%R 10.1186/1556-276X-8-14
%X We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED.
%K Light-emitting diode
%K Si nanocrystal
%K Superlattice
%K Electron transport
%K Wall-plug efficiency
%U http://www.nanoscalereslett.com/content/8/1/14/abstract