%0 Journal Article
%T Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride
%A Hock Jin Quah and Kuan Yew Cheong
%J Nanoscale Research Letters
%D 2013
%I 
%R 10.1186/1556-276X-8-53
%X The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10 6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV).
%K Yttrium oxide
%K Gallium nitride
%K Post-deposition annealing
%K Band alignment
%K Conduction band offset
%U http://www.nanoscalereslett.com/content/8/1/53/abstract