%0 Journal Article
%T Structural and electrical characteristics of high-¦Ê Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors
%A Fa-Hsyang Chen
%A Jim-Long Her
%A Yu-Hsuan Shao
%A Yasuhiro H Matsuda and Tung-Ming Pan
%J Nanoscale Research Letters
%D 2013
%I 
%R 10.1186/1556-276X-8-18
%X In this letter, we investigated the structural and electrical characteristics of high-¦Ê Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 ¡Á 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.
%K Amorphous InGaZnO
%K Thin-film transistor
%K Er2O3
%K Er2TiO5
%U http://www.nanoscalereslett.com/content/8/1/18/abstract