%0 Journal Article
%T Electrical, optical and morphological properties of chemically deposited nanostructured tungsten disulfide thin films
%A P. A. Chate
%A D. J. Sathe
%A P. P. Hankare
%J Applied Nanoscience
%@ 2190-5517
%D 2013
%I 
%R 10.1007/s13204-012-0073-0
%X Nanocrystalline tungsten disulfide thin films have been deposited on non-conducting glass substrates using triethanolamine bath. The film samples were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy and thermoelectric techniques. The crystalline phase of the deposited sample was of hexagonal wurtzite-type. The optical band gap energy of the sample was found to be 1.46 eV. The electrical conductivity of the film sample was found to be in the order of 10 3 (¦¸ cm) 1. Thermoelectric measurement showed n-type of conductivity. The configuration of fabricated cell is n-WS2 | NaI (2 M) + I2 (1 M) | C(graphite). The efficiency of the cell was found to be 1.29%.
%K Chalcogenides
%K Electronic material
%K Thin films
%K Nanomaterial
%U http://link.springer.com/article/10.1007/s13204-012-0073-0