%0 Journal Article
%T Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell Under Radiation Effect
%J American Journal of Materials Science
%@ 2162-8424
%D 2012
%I 
%R 10.5923/j.materials.20120203.07
%X The electrical and photovoltaic properties of CdSe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined ,under (100) mw/cm2, 25¡æ. The best fabricated cell shows an open-circuit voltage before irradiation is (0.62 V) and after irradiation is (0.44 V). The short-circuit current density before irradiation is (34 mA/cm2) and after irradiation is (13 mA/cm2). The fill factor before irradiation is (53 %) and after irradiation is (44.7 %). The conversion efficiency (active area) before irradiation is (11.1 %) and after irradiation is (2.5%). was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdSe side (frontwall). The cells are analyzed using I-V and P-V measurements, spectral response and 1/C2-V measurements, with focus on the influence of the solar cell thickness, light intensity illumination and effective dose of ¦Ã-radiation, which play a crucial role to improve the solar cell efficiency. ¦Ã-irradiation campaign with different doses has been carried out on a series of solar cells.
%K n-CdSe / P-Si Cells performance
%K ¦Ã-radiation Effects
%K Electrical and Photovoltaic Characteristics
%U http://article.sapub.org/10.5923.j.materials.20120203.07.html