%0 Journal Article
%T Ohmic Contacts to P-Type Doped ZnO
%J International Journal of Materials Engineering
%@ 2166-5400
%D 2013
%I 
%R 10.5923/j.ijme.20130301.01
%X For the purpose of enhance the ohmic contacts, we have utilizing Pt to act as ohmic contacts on p-type phosphorus doped ZnO (ZnO:P) by a metal with high work function. The Pt ohmic contacts in terms of electrical property and thermal stability were reported in this paper. The ZnO films doped with 3 wt. % phosphorus (P) were produced by activating phosphorus doped ZnO (ZnO:P) thin films in air ambient at 300¡æ, 400¡æ, 500¡æ, and 600¡æ for 60 min without any catalyst. The activation energies of the phosphorus dopant in the p-type ZnO under air environment show that phosphorus replacement on the O-site compliance a deep level in the gap.
%K ZnO
%K Doping
%K Semiconducting II¨CVI Materials
%K Ohmic
%U http://article.sapub.org/10.5923.j.ijme.20130301.01.html