%0 Journal Article
%T Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor
%A Masatoshi Sakai
%A Mitsutoshi Hanada
%A Shigekazu Kuniyoshi
%A Hiroshi Yamauchi
%A Masakazu Nakamura
%A Kazuhiro Kudo
%J Crystals
%D 2012
%I MDPI AG
%R 10.3390/cryst2030730
%X A gate-induced thermally stimulated current (TSC) on ¦Â¡ä-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied V P G and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate.
%K ferroelectricity
%K pyroelectric current
%K field effect transistor
%K Mott insulator
%K charge order
%U http://www.mdpi.com/2073-4352/2/3/730