%0 Journal Article
%T Properties of Gallium Phosphide Thick Films Prepared on Zinc Sul-de Substrates by Radio-Frequency Magnetron Sputtering<br>
%A Yangping Li
%A Zhengtang Liu
%A <br>
%J 材料科学技术学报
%D 2010
%I 
%X Radio-frequency (RF) magnetron sputtering was employed to prepare gallium phosphide (GaP) thick films on zinc sulfide (ZnS) substrates by sputtering a single crystalline GaP target in an Ar atmosphere. The infrared (IR) transmission properties, structure, morphology, composition and hardness of the film were studied. Results show that both amorphous and zinc-blende crystalline phases existed in the GaP film in almost stoichiometric amounts. The GaP film exhibited good IR transmission properties, though the relatively rough surface and loose microstructure caused a small loss of IR transmission due to scattering. The GaP film also showed a much higher hardness than the ZnS substrate, thereby providing good protection to ZnS.
%K Radio-frequency magnetron sputtering
%K Gallium phosphide
%K Thick film
%K Infrared transmission<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=7CA43A34F047C75833916C8C288BC65D&yid=140ECF96957D60B2&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=39EEF47180459690&eid=6700D0D256586E73&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=14