%0 Journal Article
%T Effect of Bi2Ti2O7 Seeding Layer on Capacitance-voltage Properties of Bi3:54Nd0:46Ti3O12 Films<br>
%A Huizhong Xu
%A Liang Zhen
%A Changhong Yang
%A Zhuo Wang
%A <br>
%J 材料科学技术学报
%D 2010
%I 
%X Au/Bi3:54Nd0:46Ti3O12/Bi2Ti2O7/Si structure has been fabricated with a preferentially (111)-orientated Bi2Ti2O7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator ˉeld e ect transistor. Bi3:54Nd0:46Ti3O12 and Bi3:54Nd0:46Ti3O12/Bi2Ti2O7 ˉlms are both well-crystallized when annealed at 680±C for 40 min, and have smooth, dense and crack-free surfaces. The width of memory window of the ferroelectric gate increases with increasing electric ˉeld applied to the Bi3:54Nd0:46Ti3O12 thin ˉlms. The width of memory window of Au/Bi3:54Nd0:46Ti3O12/Bi2Ti2O7/Si with seeding layer is relatively wider than that of Au/Bi3:54Nd0:46Ti3O12/Si at the same bias voltage, and the counterclockwise hysteresis curve of Au/Bi3:54Nd0:46Ti3O12/Bi2Ti2O7/Si is referred to as polarization type switching at di erent voltages. Bi2Ti2O7 seeding layer plays an important role in alleviating the element interdi usion between Bi3:54Nd0:46Ti3O12 and Si.
%K Metalorganic decomposition
%K Bismuth titanate
%K Ferroelectric materials<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=FA82BFE4D82D3D4E2CC915245DDE653B&yid=140ECF96957D60B2&vid=96C778EE049EE47D&iid=38B194292C032A66&sid=9F6DA927E843CD50&eid=AA27B676BFCAA4BE&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=19