%0 Journal Article
%T The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films<br>Nd掺杂对BiFeO3薄膜微结构和电学性能的影响
%A GAO Cheng
%A YANG Jing
%A MENG Xiang-Jian
%A BAI Wei
%A LIN Tie
%A SUN Jing-Lan
%A CHU Jun-Hao
%A <br>高成
%A 杨静
%A 孟祥建
%A 白伟
%A 林铁
%A 孙璟兰
%A 褚君浩
%J 红外与毫米波学报
%D 2012
%I Science Press
%X The Nd doped BiFeO3 thin films are prepared on LaNiO3/Si (100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3 thin films.
%K Nd doping
%K BFO thin films
%K dielectric property
%K leakage current<br>铁电薄膜
%K 介电性能
%K Nd掺杂
%K 漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=4FBFB26F9F90CE2AC8A5E2DDE68903BE&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=CA4FD0336C81A37A&sid=659D3B06EBF534A7&eid=C5154311167311FE&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=17