%0 Journal Article
%T Scanning tunneling spectra for the etched surface of p type HgCdTe<br>液相外延p型碲镉汞表面区与腐蚀凹坑的不同扫描隧道谱特征
%A WANG Qing-Yu
%A REN Xiu-Rong
%A LI Mao-Sen
%A XU De-Zheng
%A GAO Zi-Xuan
%A ZHA Fang-Xing
%A <br>王庆余
%A 任秀荣
%A 李茂森
%A 徐德政
%A 高子轩
%A 查访星
%J 红外与毫米波学报
%D 2012
%I Science Press
%X Ultra high vacuum scanning tunneling microscopy（STM） and spectroscopy （STS）were used to characterize Hg1-xCdxTe grown by liquid phase epitaxy (LPE) method. The sample was etched with 3% Bromine methanol in 2.5 minutes. The STM images display submicrometer sized pit structures with depths ranging from a few tens to a few hundreds nanometers. The scanning tunneling spectra show a larger apparent gap than the energy band gap of the bulk material due to the tip induced band bending effect. In contrast, the scanning tunneling spectra of the pits show a finite slope through zero volt, implying the contribution of high density of band gap states which blur out the band gap information.
%K HgCdTe
%K scanning tunneling microscopy (STM)
%K tunneling spectrum<br>碲镉汞
%K 扫描隧道显微镜
%K 隧道谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2C5AC4805BBB5B0E399DB36C64C56EF3&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=8B59EA573021D671&eid=4966445AEEBA9556&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=17