%0 Journal Article
%T Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures
%A Yu-Peng An
%A Yi-Ding Wang
%A Feng Cao
%J Optica Applicata
%D 2010
%I 
%X Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.
%K point defects
%K interdiffusion
%K built-in electric field
%U http://www.if.pwr.wroc.pl/~optappl/pdf/2010/no1/optappl_4001p249.pdf