%0 Journal Article
%T Characterization of Optical MISFET
%A Gayatri Phade#1
%A Dr B K Mishra
%J International Journal of Engineering Trends and Technology
%D 2013
%I Seventh Sense Research Group Journal
%X Resent research shows the tremendous potential for the development of optical devices viz. photodetector, optical sources, connectors and applications etc. This is mainly because of the success of optical communication in the recent for gigabit transmission and is intended for terabits transmission in future. It needs the parallel advancement in optodetection with higher efficiency and reliability. In this paper, mathematical model for the optical dependence of I-V, C-V characteristics of MISFET structure (to be used as photodetector) is reported. Model is based on solution of current continuity equation. Proposed structure of MISFET includes,In0.53Ga0.47As used as substrate material and InP as insulator. Light is made to incident perpendicular to the surface. Drain current and gate capacitance can be controlled optically by means of varying light intensity of incident radiations. There is significant effect of intensity modulation on IV and CV characteristics of MISFET. To control these characteristics optically, optical power is varied from 0.25mW to 25mW. As a result of intensity modulation, drain current and transconductance increases significantly in presence of illumination mainly due to change in carrier concentration of channel results from photogenerated carriers. Simulation of mathematical model is carried out in MATLAB
%K MISFET
%K modelling
%K Optical
%U http://www.ijettjournal.org/volume-4/issue-2/IJETT-V4I2P217.pdf