%0 Journal Article
%T Performance Analysis of FinFET Device at 60nm
%A I.Flavia Princess Nesamani#1
%A Rijo.P.C
%J International Journal of Engineering Trends and Technology
%D 2013
%I Seventh Sense Research Group Journal
%X A Double Gate (DG) FinFET device with High K dielectric in 60nm is presented which provides high performance compared to normal MOSFET device in terms of reduction of leakage current. A less leakage current is reported with High-K FinFET device when HfO2 used as High-k material with a dielectric constant of 25. Sentaurus TCAD tool is used to find the performance of the FinFET device
%K DIBL
%K SiO2
%K HfO2
%K DG
%K SS
%U http://www.ijettjournal.org/volume-4/issue-3/IJETT-V4I3P219.pdf