%0 Journal Article
%T A 52nW, 18ppm/ˇăC, Voltage Reference Circuit using BJTs and Subthreshold Mosfet
%A Amit Bansal
%A M. Kumarasamy Raja
%A Je Minkyu
%J International Journal of Information and Electronics Engineering
%D 2013
%I IACSIT Press
%R 10.7763/ijiee.2013.v3.257
%X A voltage reference circuit which utilizes a pair of BJTs and a MOSFET operating in subthreshold mode is designed in 0.13um CMOS 1P6M process. The proportional to temperature (PTAT) signal is derived using a pair of BJTs, while complementary to temperature (CTAT) signal is realized as gate to source voltage of subthreshold MOSFET. It requires smaller silicon area and is less sensitive to mismatches compared to the conventional bandgap generation circuit. The reference circuit works well from 1.3V to 3.6V. It has temperature stability 18ppm/ˇăC for reference voltage of 1.0V in the temperature range of -40ˇăC to 85ˇăC and it consumes 52nW power.
%K Voltage reference
%K low power bandgap voltage circuit
%K CTAT
%K PTAT
%K nano power
%K subthreshold MOSFET
%U http://www.ijiee.org/papers/257-L0031.pdf