%0 Journal Article
%T Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor
%A Kudrynskyi Z. R.
%A Kovalyuk Z. D.
%J Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
%D 2012
%I Politehperiodika
%X The article presents a method of creating heterojunc tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe¨Cp-GaSe and n-ZnSe¨Cp-InSe heterojunctions were obtained. The obtained heterojunctions are photo sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band.
%K layered crystals
%K heterojunctions
%K annealing
%K spectral characteristics
%K current-voltage characteristics
%U http://www.tkea.com.ua/tkea/2012/6_2012/pdf/09.zip