%0 Journal Article
%T Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP
%A Novitskyi S.V.
%J Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
%D 2012
%I Politehperiodika
%X It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au！TiB2！Ge！Au！n！n+！n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment were obtained at different annealing temperatures.
%K indium phosphide
%K ohmic contact
%K dislocation
%K the specific contact resistance
%U http://www.tkea.com.ua/tkea/2012/4_2012/pdf/07.zip