%0 Journal Article
%T Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method
%A Vakiv N. M.
%A Krukovskii S. I.
%A Sukach A. V.
%A Tetyorkin V. V.
%J Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
%D 2012
%I Politehperiodika
%X The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing an emitter p+-InP layer heavily doped by zinc. Electroluminescence spectra of such structures have a smaller half-width and the infrared radiation of higher power than the structures in which the p¨Cn-junction is formed in the InGaAsP layer. These heterostructures are designed to create efficient IR LEDs with wavelength of 1,06 mm in spectrum maximum.
%K epitaxial heterostructures
%K liquid-phase epitaxy
%K doping
%K electroluminescence
%K photosensitivity
%U http://www.tkea.com.ua/tkea/2012/2_2012/pdf/06.zip