%0 Journal Article
%T Wide-band chalcogenide scintillators on the basis of AIIBVI compounds
%A Starzhinskiy N. G.
%A Grinyov B. V.
%A Ryzhikov V. D.
%A Maliykin Yu. V.
%J Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
%D 2012
%I Politehperiodika
%X The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26¡ª33), large band gap (Eg=2,8¡ª3,6 eV), high thermal stability of output parameters. The prospects of use of such scintillators in various devices of modern radiation instrumentation has been shown.
%K crystals of AIIBVI compounds
%K zinc sulfide
%K scintillation characteristics
%K luminescence centers
%K chalcogenide scintillators
%U Ukraine, Kharkov, Institute for Scintillation Materials of NAS of Ukraine