%0 Journal Article
%T Memory Characteristics of Pt Nanoparticle-embedded MOS Capacitors Fabricated at Room Temperature
%A Sungsu Kim
%A Kyoungah Cho
%A Kiyeol Kwak
%A Sangsig Kim
%J Transactions on Electrical and Electronic Materials
%D 2012
%I Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
%X In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate theirmemory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxidelayers. The average size and density of the Pt NPs are 4 nm and 3.2กม1012 cm-2, respectively. Counterclockwise hysteresiswith a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOScapacitor. Moreover, more than 93% of the charge remains even after 104 s.
%K Memory
%K Nanoparticle
%K Pt
%K Sputter
%U http://dx.doi.org/10.4313/TEEM.2012.13.3.162