%0 Journal Article
%T A Review of Super Junction LDMOS
%A Hu Chen
%A Li Ming
%A He Xiaoying
%A Sun Weifeng
%J IETE Technical Review
%D 2011
%I 
%X Super Junction Lateral Double-diffused MOSFET (SJ-LDMOS) is one of the important attractive devices in high-voltage integrated circuit and power integrated circuit. However, the SJ-LDMOS is generally implemented on a low-resistance substrate, which always suffers from substrate-assisted depletion (SAD) effect, which thus degrades the performance of devices. A number of literatures have been published to solve the SAD effect and improve performance. This review summarizes the developments made in SJ-LDMOS based on bulk silicon, silicon on insulator, and silicon on sapphire in the last 10 years. Finally, the future work what researchers can do on the SJ-LDMOS also has been proposed.
%K Breakdown voltage
%K Bulk silicon
%K Lateral double-diffused MOSFET
%K Silicon on insulator
%K Silicon on sapphire
%K Specific on-resistance
%K Substrate assisted depletion
%K Super junction
%U http://tr.ietejournals.org/article.asp?issn=0256-4602;year=2011;volume=28;issue=4;spage=327;epage=335;aulast=Hu