%0 Journal Article
%T Optical Properties of Nitrogen-Doped Epitaxial ZnO Layers
%A I. V. Rogozin
%J Ukrainian Journal of Physical Optics
%D 2006
%I Institute of Physical Optics
%X Epitaxial nitrogen-doped ZnO (ZnO:N) films are obtained by the method of radical beam gettering epitaxy. Their optical properties are examinated by means of transmission and photoluminescence (PL) spectroscopy. The as-grown ZnO:N films show high transmittance (about 90%) in the visible range. A peak at 3.31 eV is seen in the low-temperature PL spectrum of the N-doped ZnO films, which is probably due to a neutral acceptor-bound exciton NO. Post-thermal annealing is performed on ZnO:N films in the atomic oxygen conditions. The PL of the annealed samples shows a strong response improvement, when compare with the non-annealed samples. The nature of the donor-acceptor band located at 3.23 eV and the ¡®green¡¯ band at 2.56 eV is discussed.
%K ZnO
%K N-doping
%K PL
%K intrinsic defects.
%U http://www.ifo.lviv.ua/journal/UJPO_PDF/2006_4/0204_2006.pdf