%0 Journal Article
%T Strong Room-temperature Photoluminescence of Si-rich and N-rich Silicon-nitride Films
%A Parkhomenko I.N.
%A Komarov F.F.
%A Vlasukova L.A.
%A Milchanin O.V.
%J Proceedings of the International Conference Nanomaterials : Applications and Properties
%D 2013
%I Sumy State University
%X Si-rich and N-rich silicon nitride films were deposited at low temperature 300 ˇăC by using plasma-enhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Si-rich and N-rich silicon nitride films after annealing at 900 ˇăC and 1000 ˇăC for hour in N2 ambient has been shown by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiNx has been discussed.
%K Nanoparticles synthesis
%K Nanoparticles study
%K Controlled properties
%K Producing processes
%K Complex structure
%U http://nap.sumdu.edu.ua/index.php/nap/nap2013/paper/view/1011