%0 Journal Article
%T A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current
%A Bradley D. Christiansen
%A Eric R. Heller
%A Ronald A. Coutu Jr.
%A Ramakrishna Vetury
%A Jeffrey B. Shealy
%J Active and Passive Electronic Components
%D 2012
%I Hindawi Publishing Corporation
%R 10.1155/2012/493239
%X Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (
%U http://www.hindawi.com/journals/apec/2012/493239/