%0 Journal Article
%T Trap-Assisted Tunneling in the Schottky Barrier
%A J. Racko
%A J. Pechacek
%A M. Mikolasek
%A P. Benko
%J Radioengineering
%D 2013
%I Spolecnost pro radioelektronicke inzenyrstvi
%X The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.
%K Trap-assisted
%K direct tunneling
%K Schottky barrier
%U www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf