%0 Journal Article
%T Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation
%A Nikoli£¿ Dejan S.
%A Vasi£¿ Aleksandra I.
%A Lazarevi£¿ £¿or£¿e
%A Obrenovi£¿ Marija D.
%J Nuclear Technology and Radiation Protection
%D 2013
%I VIN?A Institute of Nuclear Sciences
%R 10.2298/ntrp1301084n
%X This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have been measured after each of these irradiations. It has been noted that the photocurrent level after the neutron irradiation is higher than before it, which is not consistent with the current theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close proximity to each other. The aim of this paper is to investigate the improvement possibilities of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by gamma irradiation. [Projekat Ministarstva nauke Republike Srbije, br. 171007]
%K PIN photodiode
%K gamma irradiation
%K neutron irradiation
%K I-V characteristic
%K Monte Carlo simulation
%U http://www.doiserbia.nb.rs/img/doi/1451-3994/2013/1451-39941301084N.pdf