%0 Journal Article
%T INVESTIGATION OF InGaN/Si DOUBLE JUNCTION TANDEM SOLAR CELLS
%A F. Bouzid
%A L. Hamlaoui
%J Journal of Fundamental and Applied Sciences
%D 2012
%I El Oued University
%X In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results show that a front recombination velocity value of 1e3cm/s is most advantageous and the use of relatively thick bottom cell is necessary to obtain conversion efficiency greater than 27%, at 300¡ãk cell temperature. This efficiency will decrease as the operating temperature increase.
%K Photovoltaic
%K Efficiency
%K Carrier lifetimes
%K Recombination velocity
%K Temperature.
%U http://jfas.info/index.php/JFAS/article/view/44/pdf