%0 Journal Article
%T Optical evaluation of doping concentration in SiO2 doping source layer for silicon quantum dot materials
%A Zhang T.
%A Perez-Wurlf I.
%A Berghoff B.
%A Suckow S.
%J EPJ Photovoltaics
%D 2011
%I EDP Sciences
%R 10.1051/epjpv/2011024
%X We have investigated and proposed a simple method to correlate optical absorption with high B doping concentrations in thin SiO2 films that offer a potential doping source for Si quantum dots. SiO2 films with boron and phosphorus were deposited using a computer controlled co-sputtering system. By assessing the absorption coefficients, it was observed that the doping can dramatically increase the absorption of the transparent SiO2. Additionally, the highly doped SiO2 films have a very broad Urbach like absorption tail and the absorption corresponds well with the doping level.
%U http://dx.doi.org/10.1051/epjpv/2011024