%0 Journal Article
%T Ultrafast laser direct hard-mask writing for high efficiency c-Si texture designs
%A Kumar Kitty
%A Lee Kenneth K.C.
%A Nogami Jun
%A Herman Peter R.
%J EPJ Photovoltaics
%D 2013
%I EDP Sciences
%R 10.1051/epjpv/2013015
%X This study reports a high-resolution hard-mask laser writing technique to facilitate the selective etching of crystalline silicon (c-Si) into an inverted-pyramidal texture with feature size and periodicity on the order of the wavelength which, thus, provides for both anti-reflection and effective light-trapping of infrared and visible light. The process also enables engineered positional placement of the inverted-pyramid thereby providing another parameter for optimal design of an optically efficient pattern. The proposed technique, a non-cleanroom process, is scalable for large area micro-fabrication of high-efficiency thin c-Si photovoltaics. Optical wave simulations suggest the fabricated textured surface with 1.3 ¦Ìm inverted-pyramids and a single anti-reflective coating increases the relative energy conversion efficiency by 11% compared to the PERL-cell texture with 9 ¦Ìm inverted pyramids on a 400 ¦Ìm thick wafer. This efficiency gain is anticipated to improve further for thinner wafers due to enhanced diffractive light trapping effects.
%U http://dx.doi.org/10.1051/epjpv/2013015