%0 Journal Article
%T Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
%A E. F. Shevchenko
%A V. A. Tarala
%A M. Yu. Shevchenko
%A A. A. Titarenko
%J Advances in Materials Science and Engineering
%D 2014
%I Hindawi Publishing Corporation
%R 10.1155/2014/979450
%X Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12每200ˋmPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C3H8, CH4, Si(CH3)2Cl2, H2), the voltage of accelerating gap in the range 0.5每5ˋkV, and the substrate temperature in the range 20每850∼C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials. 1. Introduction Film deposition or surface modification directly from the ion beam is one of the most promising methods because it allows controlling the energy of the particles of deposited material and has a number of advantages over the other most common methods of producing films in vacuum [1每4]. At an average energy of the ions, 1每5ˋkeV, the deposition method of immersion ion implantation is implemented [5每7]. For obtaining ions with such energy it is convenient to use self-contained ion source based on DC glow discharge plasma allowing to regulate the ion energy and ion current density precisely and widely. Research to improve technology and equipment to carry out this process are very relevant in view of the accelerated development of micro- and nanoelectronics today. Deposition of diamond-like carbon films [8] by the above-mentioned methods using multicellular ion source (IS) ※Radical-M250§ [3] is known. This IS forms the ion beam with a large area of cross section. To solve the same technological challenges, we proposed [9] to use the IS based on Penning discharge with hollow cathode in crossed E ℅ H fields. Used modification of this type of IS cannot produce ion beams of large cross-sectional area; however, it has a number of advantages over other parameters. Unlike IS ※Radical-M250§ in the proposed IS there is independent adjustment of the ion current density and ion energy in a wide range. Furthermore, FWHM of function of ion energy distribution in the beam of IS ※Radical-M250§ is 540每580ˋeV [3]; the same parameter at the same beam current in proposed IS can be sufficiently lower [10]. Providing a significant influence of the ion energy on properties of the synthesized films, the ion source with a narrow energy spectrum of the ions will more effectively and predictably control
%U http://www.hindawi.com/journals/amse/2014/979450/