%0 Journal Article %T Low Pressure Chemical Vapor Deposition of Nb and F Co-Doped TiO<sub>2</sub> Layer %A Satoshi Yamauchi %A Shouta Saiki %A Kazuhiro Ishibashi %A Akie Nakagawa %A Sakura Hatakeyama %J Journal of Crystallization Process and Technology %P 79-88 %@ 2161-7686 %D 2014 %I Scientific Research Publishing %R 10.4236/jcpt.2014.42011 %X Nb and F co-doped anatase TiO₂ layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O₂ and NbF₅ as precursor, oxidant and dopant respectively. Resistivity beyond 100 ІИcm for undoped layer was decreased with increasing supply of the dopant and dependent on the supply ratio of O₂ to TTIP and decreased to 0.2 ІИcm by the optimization. X-ray fluorescent spectroscopy showed Nb-content in the layer was decreased with the O₂-supply ratio. X-ray photo-spectroscopy indicated that F substituted O-site in TiO₂ by O₂-supply but carbon-contamination and F missing substitution in the O-site were significantly increased by excess O₂-supply. Further, it was suggested that the substituted F played an important role to reduce resistivity without significant contribution of O-vacancies. XRD spectra showed F missing substitution in the O-site degraded the crystallinity. %K LPCVD %K Anatase-TiO< %K sub> %K 2< %K /sub> %K Nb and F Co-Doping %K Low-Resistive TiO< %K sub> %K 2< %K /sub> %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=44500