%0 Journal Article
%T 28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide¡ªPart II
%A Ali Mohsen
%A Adnan Harb
%A Nathalie Deltimple
%A Abraham Serhane
%J Circuits and Systems
%P 111-121
%@ 2153-1293
%D 2017
%I Scientific Research Publishing
%R 10.4236/cs.2017.85007
%X This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor¡¯s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their preferences in different applications.
%K UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator
%K Tri-Gate FinFET
%K DIBL: Drain Induced Barrier Lowering
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=76277