%0 Journal Article
%T High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric
%A Mei-Na Zhang
%A Shi-Jin Ding
%A Wen-Jun Liu
%A Xiaohan Wu
%A Yan Shao
%J Archive of "Nanoscale Research Letters".
%D 2019
%R 10.1186/s11671-019-2959-1
%X Electrical properties of Al2O3 films deposited at different temperatures. a Dielectric constant versus frequency. b Leakage current density versus electric fiel
%K Amorphous In-Ga-Zn-O
%K Thin-film transistor
%K Room temperature
%K Atomic layer deposition
%K Hydrogen-rich Al2O3
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6445835/