%0 Journal Article
%T Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation
%A Genquan Han
%A Huan Liu
%A Jinping Ao
%A Yan Liu
%A Yang Xu
%A Yibo Wang
%A Yue Hao
%J Archive of "Nanoscale Research Letters".
%D 2019
%R 10.1186/s11671-019-2958-2
%X a Key process flow for fabricating Ge pMOSFETs with GeO2 surface passivation with three different passivation methods. b Schematic and c microscope images of the fabricated Ge transisto
%K Germanium
%K Passivation
%K Ozone
%K Plasma
%K Post oxidation
%K Metal-oxide-semiconductor field-effect transistor (MOSFET)
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6450985/