%0 Journal Article
%T Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
%A Jinfeng Kang
%A Lifeng Liu
%A Peng Huang
%A Xiangxiang Ding
%A Yulin Feng
%J Archive of "Nanoscale Research Letters".
%D 2019
%R 10.1186/s11671-019-2956-4
%X a The structure of Pt/HfO2/TiOx/Pt device. b The fabrication process flo
%K RRAM
%K Low power
%K Atomic layer deposition
%K Titanium oxide
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6509306/