%0 Journal Article
%T Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
%A Genquan Han
%A Jing Li
%A Jiuren Zhou
%A Yan Liu
%A Yue Hao
%J Archive of "Nanoscale Research Letters".
%D 2019
%R 10.1186/s11671-019-3013-z
%X a Key process steps of fabricated NC devices. The schematics of the fabricated b NCFET and c control MOSFE
%K Germanium
%K Negative capacitance
%K Passivation time
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534638/