%0 Journal Article
%T High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
%A Anbang Zhang
%A Bo Zhang
%A Chao Yang
%A Dongfa Ouyang
%A Jie Wei
%A Siyu Deng
%A Tao Sun
%A Xiaorong Luo
%J Archive of "Nanoscale Research Letters".
%D 2019
%R 10.1186/s11671-019-3025-8
%X Three-dimensional schematic of a FPL HEMT (inset: HR-TEM micrograph of LPCVD SiNx), b FBL HEMT, and c Conv. HEM
%K AlGaN/GaN HEMT
%K Fluorine ion implantation
%K SiNx passivation layer
%K Breakdown voltage
%K Dynamic ON-resistance
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6548790/