%0 Journal Article
%T Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
%A Changhwan Shin
%A Eunah Ko
%A Jaemin Shin
%J Archive of "Nano Convergence".
%D 2018
%R 10.1186/s40580-018-0135-4
%X Atomic structure of typical ferroelectric material, Pb(ZrxTi1£¿x)O3 (PZT). The atomic structure of ferroelectric material (herein, PZT) is shown. The polarization direction is set by externally applied bias. When the externally applied electric field is stronger than the coercive electric field of the ferroelectric material, the atom at the center of unit cell can move upward or downward, resulting in the switching of polarization stat
%K Steep switching device
%K Negative capacitance
%K Phase FET
%K Low power application
%K Field effect transistor
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5787217/