%0 Journal Article
%T A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime
%A C. Vijaya
%A Vyas R. Murnal
%J Archive of "Nano Convergence".
%D 2019
%R 10.1186/s40580-019-0189-y
%X Different transport phenomena and physical effects arising when the channel length L of a DG MOSFET undergoes rigorous scaling. The grey shaded area is the core device channel length regime for the proposed wor
%K Ballistic transport
%K Drift¨Cdiffusion
%K Quasi-ballistic
%K Scattering
%K SDG MOSFETs
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6571439/