%0 Journal Article
%T Improved electrical performance of a sol¨Cgel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing
%A Byungjin Cho
%A Esther Lee
%A Jaeun Kim
%A Jee Hoon Kim
%A Ji-Hoon Ahn
%A Seung Won Lee
%A Tae Gun Jeong
%A Tae Hyeon Kim
%J Archive of "Nano Convergence".
%D 2019
%R 10.1186/s40580-019-0194-1
%X The online version of this article (10.1186/s40580-019-0194-1) contains supplementary material, which is available to authorized users
%K Indium gallium zinc oxide IGZO
%K Post annealing
%K Capacitance¨Cvoltage measurement
%K X-ray photoelectron spectroscopy depth profiling
%K Electrical bias stress stability
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643007/