%0 Journal Article %T Experimental Characterization of ALD Grown Al<SUB>2</SUB>O<SUB>3</SUB> Film for Microelectronic Applications %A Yuxi Wang %A Yida Chen %A Yong Zhang %A Zhaoxin Zhu %A Tao Wu %A Xufeng Kou %A Pingping Ding %A Romain Corcolle %A Jangyong Kim %J Advances in Materials Physics and Chemistry %P 7-19 %@ 2162-5328 %D 2021 %I Scientific Research Publishing %R 10.4236/ampc.2021.111002 %X The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al₂O₃ thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al₂O₃ films of MIM capacitors on glass was examined in the voltage range from −5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al₂O₃/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/¦Ìm²at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 ¡Á 10^−8 A/cm² at 1 MV/cm (5 V) at room temperature. Au/Al₂O₃/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/¦Ìm² at 100 %K Dielectrics %K High-< %K i> %K k< %K /i> %K Thin Film Capacitors %K Atomic Layer Deposition %K Microfabrication %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=106804