%0 Journal Article
%T Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics
%A A.A. Demidov
%A B.P. Surin
%A E.Yu. Krayushkina
%A O.A. Shishkina
%A S.B. Rybalka
%J -
%D 2017
%R 10.14419/ijpr.v5i1.7065
%X Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson¡¯s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the ¡°ideal¡± diode with average ideality factor n£¿1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.
%U https://www.sciencepubco.com/index.php/IJPR/article/view/7065