%0 Journal Article
%T Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1¨CxN/GaN High Electron Mobility Transistor Structures on Si (111)
%J -
%D 2019
%R https://doi.org/10.1021/acsaelm.8b00084
%X In this article, we report on an optically coupled, electrically isolated switch based on the III-nitride heterostructures on a silicon substrate. All the circuit elements, including the ultraviolet (UV) detector and a normally on transistor, were monolithically integrated on a single AlxGa1¨CxN/GaN high electron mobility transistor (HEMT) stack grown on a 200 mm Si (111) substrate, and the process was fully compatible with conventional III-N HEMT fabrication flow. On-wafer UV detector was realized using a gate-recessed architecture which exhibited excellent spectral responsivity and broadband nature, while the discrete HEMT was found to exhibit ON current of 500 mA/mm. The integrated system was found to switch from an OFF-state current of 5 ¦ÌA (UV-Off) to an ON-state current of 50 mA (UV-ON) in ¡«4 ms, and this delay may be further reduced with optimization of such a monolithic device design and improvement of crystal quality of nitrides on the large area Si platforms
%U https://pubs.acs.org/doi/10.1021/acsaelm.8b00084