%0 Journal Article
%T AC Back Surface Recombination Velocity in n<sup>£«</sup>-p-p<sup>£«</sup> Silicon Solar Cell under Monochromatic Light and Temperature
%A Mame Faty Mbaye Fall
%A Idrissa Gaye
%A Dianguina Diarisso
%A Gora Diop
%A Khady Loum
%A Nafy Diop
%A Khalidou Mamadou Sy
%A Mor Ndiaye
%A Gregoire Sissoko
%J Journal of Electromagnetic Analysis and Applications
%P 67-81
%@ 1942-0749
%D 2021
%I Scientific Research Publishing
%R 10.4236/jemaa.2021.135005
%X Excess minority carrier¡¯s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities <i>Sf</i> and <i>Sb</i>, respectively at the junction (n<sup>£«</sup>/p) and back surface (p<sup>£«</sup>/p), the AC expression of the excess minority carriers¡¯ density <i>¦Ä</i> (<i>T</i>, <i>¦Ø</i>) is determined. The AC density of photocurrent <i>J<sub>ph</sub></i> (<i>T</i>, <i>¦Ø</i>) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity <i>Sb</i> of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (<i>D</i> (<i>¦Ø</i>)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.
%K Silicon Solar Cell
%K AC Back Surface Recombination Velocity
%K Temperature
%K Bode and Nyquist Diagrams
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=110800