%0 Journal Article
%T Simulation of a CIGS Solar Cell with CIGSe<sub>2</sub>/MoSe<sub>2</sub>/Mo Rear Contact Using AFORS-HET Digital Simulation Software
%A Donafologo Soro
%A Adama Sylla
%A N¡¯Guessan Armel Ignace
%A Aboudoulaye Toure
%A Amal Bouich
%A Siaka Toure
%A Bernab¨¦ Mar¨ª
%J Modeling and Numerical Simulation of Material Science
%P 13-23
%@ 2164-5353
%D 2022
%I Scientific Research Publishing
%R 10.4236/mnsms.2022.122002
%X In this work, the AFORS-HET digital simulation
software was used to calculate the electrical characteristics of the
cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p <span style=\"font-family:;\" \"=\"\">+ -MoSe<sub>2</sub>/Mo/SLG.
When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5</span><span style=\"font-family:;\" \"=\"\"> </span><span style=\"line-height:97%;font-family:;\" \"=\"\">¦̀</span><span style=\"font-family:;\" \"=\"\">m, the efficiency of the cell with an interfacial
layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about
24.6%, higher to that of a conventional cell which is 23.4% for a thickness of
1.5 ¦̀m of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky
barrier height greater than 0.45 eV severely affects the fill factor and the
open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.</span>
%K CIGS
%K Molybdenum Diselenide (MoSe&lt
%K sub&gt
%K 2&lt
%K /sub&gt
%K )
%K AFORS-HET
%K Simulation
%K Efficiency
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=115855