%0 Journal Article %T 具有零场单分子磁体性质的钴单离子磁体
Cobalt-Based SIMs with Zero Field Single-Molecule Magnetic Properties %A 徐红娟 %A 崔会会 %J Hans Journal of Nanotechnology %P 124-136 %@ 2161-0878 %D 2022 %I Hans Publishing %R 10.12677/NAT.2022.123015 %X 单分子磁体材料作为真正意义上的纳米级磁性材料,具有非常广阔的应用前景,研究者们致力于开发性能更优秀,更稳定的单分子磁体。作为特殊的单分子磁体,3d过渡金属单离子磁体磁构关系较为简单,通过适当调控配体场即可将中心金属离子的各向异性最大化,因此3d过渡金属单离子磁体自然而然的成为了前沿研究热点之一。在3d过渡金属单离子磁体中,由于钴离子具有较大的磁各向异性,因此关于钴基配合物的研究与报道居多。但目前报道的大都为场致单离子磁体,很少有单核配合物在零场下表现出慢磁弛豫行为,因此对于零场钴单离子磁体亟需更加深入地研究。本文结合现有研究成果,以单核钴配合物为研究基础,从配位数和配位构型出发,对具有零场单分子磁体性质的钴单离子磁体进行综述,为进一步研究高性能单分子磁体提供新思路。
As real nano-scale magnet materials, single-molecule magnets (SMMs) have very broad application prospects. Re-searchers are committed to developing single molecule magnets with better performance and more stability. The 3d transition metal single-ion magnets (3d-SIMs), as special single-molecule magnets, have relatively simple magneto-structure correlation, and the anisotropy of the central metal ion can be maximized by properly adjusting the ligand field. Therefore, the 3d-SIMs naturally becomes one of the frontier research hotspots. In 3d-SIMs, there are many studies and reports on co-balt-based complexes due to the large magnetic anisotropy of cobalt ion. However, most of the cur-rent reports are field induced single ion magnets, and few cobalt-based SIMs show slow magnetic relaxation under zero field. Therefore, it is urgent to study more in-de- pthly on zero field co-balt-based SIMs. Combined with the existing research results, this paper takes mononuclear co-balt-based complexes as the research basis. Starting from the coordination number and configura-tion, the mononuclear cobalt-based complexes with zero field single-molecule magnetic properties are reviewed, which provides new ideas for the further study of high-performan- ce single-molecule magnets. %K 单分子磁体,3d过渡金属离子,单离子磁体,单核钴基配合物,零场
Single-Molecule Magnets %K 3d Transition Metal Ion %K Single-Ion Magnets %K Mononuclear Cobalt-Based Complexes %K Zero Field %U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=55148