%0 Journal Article
%T High Performance for Cu(In,Ga)Se<sub>2</sub> Quaternary System-Based Solar Cells with Alternative Buffer Layers
%A Daouda Oubda
%A Marcel Bawindsom K¨¦br¨¦
%A Souma£¿la Ou¨¦draogo
%A Alain Diasso
%A Fran£¿ois Zougmor¨¦
%A Zacharie Koalga
%A Fr¨¦d¨¦ric Ouattara
%J Advances in Materials Physics and Chemistry
%P 207-219
%@ 2162-5328
%D 2022
%I Scientific Research Publishing
%R 10.4236/ampc.2022.129015
%X In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as Jsc, Voc, QE and ¦Ç of the quaternary system Cu(In,Ga)Se2 solar cells. The performance of Cu(In,Ga)Se2solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: JSC = 34.6 mA/cm2, VOC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density JSC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.
%K Thin Film Solar Cells
%K CIGS Absorber
%K Alternative Buffer Layers
%K SCAPS-1D
%K Electrical Parameters
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=120191