%0 Journal Article
%T A Study on the Efficiency Gain of CsSnGeI<sub>3</sub> Solar Cells with Graphene Doping
%A Mohammed M. Shabat
%A Guillaume Zoppi
%J World Journal of Condensed Matter Physics
%P 90-104
%@ 2160-6927
%D 2023
%I Scientific Research Publishing
%R 10.4236/wjcmp.2023.133006
%X This paper presents a newly designed ultra-thin, lead-free,
and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D
simulator, incorporating solid-state layers arranged
as n-graphene/CsSnGeI3/p-graphene. The objective was to investigate the
potential of utilizing n-graphene as the electron transport
layer and p-graphene as the hole transport layer to achieve maximum power conversion efficiency. Various materials for the
electron transport layer were evaluated. The optimized cell structure achieved a
maximum power conversion efficiency of 20.97%. The proposed solar cell structure
demonstrates promising potential as an efficient, inorganic photovoltaic device.
These findings provide important insights for developing and optimizing inorganic
photovoltaic cells based on CsSnGeI3, with n-graphene electron transport
layers and p-graphene hole transport layers.
%K Perovskite Solar Cells
%K Efficiency Gain
%K CsSnGeI<
%K sub>
%K 3<
%K /sub>
%K Solar Cells
%K Graphene Doping
%K Photovoltaics
%K Thin-Film Solar Cells
%K Energy Conversion
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=126797