%0 Journal Article %T A Study on the Efficiency Gain of CsSnGeI<sub>3</sub> Solar Cells with Graphene Doping %A Mohammed M. Shabat %A Guillaume Zoppi %J World Journal of Condensed Matter Physics %P 90-104 %@ 2160-6927 %D 2023 %I Scientific Research Publishing %R 10.4236/wjcmp.2023.133006 %X This paper presents a newly designed ultra-thin, lead-free, and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D simulator, incorporating solid-state layers arranged as n-graphene/CsSnGeI3/p-graphene. The objective was to investigate the potential of utilizing n-graphene as the electron transport layer and p-graphene as the hole transport layer to achieve maximum power conversion efficiency. Various materials for the electron transport layer were evaluated. The optimized cell structure achieved a maximum power conversion efficiency of 20.97%. The proposed solar cell structure demonstrates promising potential as an efficient, inorganic photovoltaic device. These findings provide important insights for developing and optimizing inorganic photovoltaic cells based on CsSnGeI3, with n-graphene electron transport layers and p-graphene hole transport layers. %K Perovskite Solar Cells %K Efficiency Gain %K CsSnGeI< %K sub> %K 3< %K /sub> %K Solar Cells %K Graphene Doping %K Photovoltaics %K Thin-Film Solar Cells %K Energy Conversion %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=126797